#Discretization comsol 5.3 series#
This series of models includes the effect of band gap narrowing that has been improved. The MOSFET series of tutorials are updated with a user-defined mesh that is coarser, for faster computations. Tutorial Model Improvements MOSFET Series of Tutorials
The eigenvalue study is not suitable for solving this kind of nonlinear eigenvalue problem. The equation is essentially a nonlinear single-particle Schrödinger equation, with a potential energy contribution proportional to the local particle density. This tutorial model solves the Gross-Pitaevskii equation for the ground state of a Bose-Einstein condensate in a harmonic trap, using the Schrödinger Equation physics interface in the Semiconductor Module. New Tutorial Model: Gross-Pitaevskii Equation for Bose-Einstein Condensation This helps the study of various scattering phenomena. In addition to the Open Boundary condition for outgoing waves, the Perfectly Matched Layer (PML) functionality is added to the Schrödinger Equation interface to absorb outgoing waves for stationary studies.
PML for the Schrödinger Equation Interface
The expanded functionality allows more flexibility in studying systems with complex trap properties, in particular its dynamics. The energy discretization, the energy range, and number of mesh points along the energy axis can also be tailored individually for each continuous energy level subnode. The functionality of the Trapping feature is expanded so that users can enter the initial trap occupancy and the degeneracy factor individually for each discrete or continuous energy level subnode.